VS-GB50LP120N www.vishay.com vishay semiconductors revision: 10-jun-15 1 document number: 93418 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 molding type module igbt, chopper in 1 package, 1200 v and 50 a features ? high short circuit capability, self limiting to 6 x i c ? 10 s short circuit capability ? low inductance case ? fast and soft reverse re covery antiparallel fwd ? isolated copper baseplate using dcb (direct copper bonding) technology ?v ce(on) with positive temperature coefficient ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? ac inverter drives ? switching mode power supplies ? electronic welders description vishays igbt power module provides ultralow conduction loss as well as short circuit ru ggedness. it is designed for applications such as ge neral inverters and ups. note (1) repetitive rating: pulse width limited by maximu m junction temperature product summary v ces 1200 v i c at t c = 80 c 50 a v ce(on) (typical) at i c = 50 a, 25 c 1.7 v speed 8 khz to 30 khz package int-a-pak circuit chopper low side switch int-a-pak absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v gate to emi tter voltage v ges 20 collector current i c t c = 25 c 100 a t c = 80 c 50 pulsed collector current i cm (1) t p = 1 ms 100 diode continuous forward current i f 50 diode maximum forward current i fm 100 maximum power dissipation p d t j = 150 c 446 w short circuit withstand time t sc t j = 125 c 10 s i 2 t-value, diode i 2 tv r = 0 v, t = 10 ms, t j = 125 c 420 a 2 s rms isolation voltage v isol f = 50 hz, t = 1 min 2500 v igbt electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces t j = 25 c 1200 - - v collector to emitter saturation voltage v ce(on) v ge = 15 v, i c = 50 a, t j = 25 c - 1.70 - v ge = 15 v, i c = 50 a, t j = 125 c - 1.95 - gate to emitter threshold voltage v ge(th) v ce = v ge , i c = 2 ma, t j = 25 c 5.0 6.2 7.0 zero gate voltage collector current i ces v ce = v ces , v ge = 0 v, t j = 25 c - - 1.0 ma gate to emitter leakage current i ges v ge = v ges , v ce = 0 v, t j = 25 c - - 400 na
VS-GB50LP120N www.vishay.com vishay semiconductors revision: 10-jun-15 2 document number: 93418 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 switching char acteristics parameter symbol test conditions min. typ. max. units turn-on delay time t d(on) v cc = 600 v, i c = 50 a, r g = 18 ? , ? v ge = 15 v, t j = 25 c -220- ns rise time t r -60- turn-off delay time t d(off) -420- fall time t f -60- turn-on switching loss e on -2.1- mj turn-off switching loss e off -2.6- turn-on delay time t d(on) v cc = 600 v, i c = 50 a, r g = 18 ? , ? v ge = 15 v, t j = 125 c -270- ns rise time t r -60- turn-off delay time t d(off) -500- fall time t f -65- turn-on switching loss e on -4.1- mj turn-off switching loss e off -4.7- input capacitance c ies v ge = 0 v, v ce = 25 v, f = 1.0 mhz -4.29- nf output capacitance c oes -0.30- reverse transfer capacitance c res -0.20- sc data i sc t sc ? 10 s, v ge = 15 v, t j = 125 c, v cc = 900 v, v cem ? 1200 v -270- a internal gate resistance r gint -10- ? stray inductance l ce - - 30 nh module lead resistance, terminal to chip r cc+ee t c = 25 c - 0.75 - m ? diode electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units diode forward voltage v f i f = 50 a t j = 25 c - 2.15 - v t j = 125 c - 2.35 - diode reverse recovery time t rr i f = 50 a, v r = 600 v, ? di/dt = -2100 a/s, ? v ge = -15 v t j = 25 c - 90 - ns t j = 125 c - 130 - diode peak reverse recovery current i rm t j = 25 c - 52 - a t j = 125 c - 60 - diode reverse recovery energy e rec t j = 25 c - 1.9 - mj t j = 125 c - 4.0 - thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j -40 - 150 c storage temperature range t stg -40 - 125 junction to case ? per ? module igbt r thjc - - 0.28 k/w diode - - 0.65 case to sink r thcs conductive grease applied - 0.05 - mounting torque power terminal screw: m5 2.5 to 5.0 nm mounting screw: m6 3.0 to 6.0 weight 150 g
VS-GB50LP120N www.vishay.com vishay semiconductors revision: 10-jun-15 3 document number: 93418 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical output characteristics v ge = 15 v fig. 2 - typical transfer characteristics v ce = 20 v fig. 3 - switching loss vs. collector current t j = 125 c, v cc = 600 v, v ge = 15 v, r g = 18 ? fig. 4 - switching loss vs. gate resistance t j = 125 c, v cc = 600 v, v ge = 15 v, i c = 50 a fig. 5 - gate charge characteristics i c = 50 a, t j = 25 c fig. 6 - typical capacitance vs . collector to emitter voltage i c (a) v ce (v) 03 12 4 0 93418_01 171 57 28.5 114 85.5 142.5 t j = 125 c t j = 25 c i c (a) v g e (v) 02 5 13 6 489 71112 10 13 93418_02 171 85.5 28.5 0 142.5 57 114 t j = 125 c t j = 25 c e on , e off (mj) i c (a) 0100 20 40 10 30 50 70 60 80 90 0 1 2 4 8 6 3 5 9 7 93418_03 10 e on e off e on , e off (mj) r g ( ) 060 10 20 30 40 50 0 1 2 4 8 6 3 5 9 7 93418_04 10 e on e off v g e (v) q g (c) 0 0.2 0.4 0.5 0.1 0.3 0.6 93418_05 20 10 0 15 5 v cc = 600 v v cc = 900 v 0.1 1 10 0 93418_06 51525 10 20 30 v ce (v) c (nf) 35 c ie s c oe s c re s
VS-GB50LP120N www.vishay.com vishay semiconductors revision: 10-jun-15 4 document number: 93418 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical switching time vs. i c t j = 125 c, v cc = 600 v, v ge = 15 v, r g = 18 ? fig. 8 - typical switching time vs. gate resistance t j = 125 c, v cc = 600 v, v ge = 15 v, i c = 50 a fig. 9 - typical forward characteristics (diode) fig. 10 - transient thermal impedance t (ns) i c (a) 0120 20 40 60 100 80 10 93418_07 1000 100 t d(off) t d(on) t f t r t (ns) r g ( ) 010 40 20 50 30 60 10 93418_08 1000 100 t d(off) t d(on) t f t r i f (a) v f (v) 03.5 0.5 1.5 2.5 1.0 2.0 3.0 0 93418_09 100 40 30 80 20 60 90 70 10 50 125 c 25 c 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t p (s) z thjc (k/w) 93418_10 diode igbt
VS-GB50LP120N www.vishay.com vishay semiconductors revision: 10-jun-15 5 document number: 93418 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration links to related documents dimensions www.vishay.com/doc?95524 1 6 7 3 2
outline dimensions www.vishay.com vishay semiconductors revision: 06-aug-12 1 document number: 95524 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 int-a-pak dimensions in millimeters (inches)
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